| No. |
Part Name |
Description |
Manufacturer |
| 6391 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 6392 |
AM0912-080 |
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6393 |
AM0912-150 |
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6394 |
AM0912-300 |
AVIONICS APPLICATIONS, RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6395 |
AM0912-350 |
Avionics power RF transistor |
SGS Thomson Microelectronics |
| 6396 |
AM1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 6397 |
AM1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 6398 |
AM1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 6399 |
AM1011-070 |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 6400 |
AM1011-075 |
L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6401 |
AM1011-175 |
High power Class C transistor |
SGS Thomson Microelectronics |
| 6402 |
AM1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 6403 |
AM1011-300 |
RF & MICROWAVE TRANSISTORS, AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 6404 |
AM1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 6405 |
AM1011-400 |
L-BAND AVIONICS APPLICATIONS, RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6406 |
AM1011-500 |
RF & MICROWAVE TRANSISTORS, AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 6407 |
AM1214-100 |
L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6408 |
AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
| 6409 |
AM1214-175 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6410 |
AM1214-200 |
L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6411 |
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
| 6412 |
AM1214-300 |
L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6413 |
AM1214-325 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6414 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 6415 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 6416 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 6417 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 6418 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 6419 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 6420 |
AM1517-012 |
SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
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