| No. |
Part Name |
Description |
Manufacturer |
| 6391 |
SCN2661BA1F28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6392 |
SCN2661BC1A28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6393 |
SCN2661BC1F28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6394 |
SCN2661BC1N28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6395 |
SCN2661BM1F28 |
5 V, enhanced programmable communication interface (EPCI) |
Philips |
| 6396 |
SCN2661CA1F28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6397 |
SCN2661CC1A28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6398 |
SCN2661CC1F28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6399 |
SCN2661CC1N28 |
Enhanced programmable communications interface EPCI |
Philips |
| 6400 |
SCN2661CM1F28 |
5 V, enhanced programmable communication interface (EPCI) |
Philips |
| 6401 |
SCN68661 |
Enhanced programmable communications interface EPCI |
Philips |
| 6402 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6403 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6404 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6405 |
SD1101BD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6406 |
SD1101CHP |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6407 |
SD1101DD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6408 |
SD1101HD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6409 |
SD1102BD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6410 |
SD1102CHP |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6411 |
SD1102DD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6412 |
SD1102HD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 6413 |
SD1106AD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6414 |
SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6415 |
SD1106DD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6416 |
SD1107BD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6417 |
SD1107CHP |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6418 |
SD1107DD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6419 |
SD1107HD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6420 |
SD1107N |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
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