No. |
Part Name |
Description |
Manufacturer |
6391 |
IR3622AMPBF |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6392 |
IR3622M |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6393 |
IR3622MPBF |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6394 |
IR3622MTRPBF |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6395 |
IR3623M |
High Frequency 2-Phase, Single or Dual Output Synchronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6396 |
IR3623MPBF |
High Frequency 2-Phase, Single or Dual Output Synchronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6397 |
IR3623MTRPBF |
High Frequency 2-Phase, Single or Dual Output Synchronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
6398 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
6399 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
6400 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
6401 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
6402 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
6403 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
6404 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
6405 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
6406 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
6407 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
6408 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
6409 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
6410 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
6411 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
6412 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
6413 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
6414 |
IRF224 |
(IRF225) HEXFET Transistors |
International Rectifier |
6415 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
6416 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
6417 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
6418 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
6419 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
6420 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
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