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Datasheets for T TRA

Datasheets found :: 14811
Page: | 210 | 211 | 212 | 213 | 214 | 215 | 216 | 217 | 218 |
No. Part Name Description Manufacturer
6391 IR3622AMPBF High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6392 IR3622M High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6393 IR3622MPBF High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6394 IR3622MTRPBF High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6395 IR3623M High Frequency 2-Phase, Single or Dual Output Synchronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6396 IR3623MPBF High Frequency 2-Phase, Single or Dual Output Synchronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6397 IR3623MTRPBF High Frequency 2-Phase, Single or Dual Output Synchronous Step Down Controller with Output Tracking and Sequencing International Rectifier
6398 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
6399 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
6400 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
6401 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
6402 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
6403 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
6404 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
6405 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
6406 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
6407 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
6408 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
6409 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
6410 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
6411 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
6412 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
6413 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
6414 IRF224 (IRF225) HEXFET Transistors International Rectifier
6415 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
6416 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
6417 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
6418 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
6419 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
6420 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State


Datasheets found :: 14811
Page: | 210 | 211 | 212 | 213 | 214 | 215 | 216 | 217 | 218 |



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