| No. |
Part Name |
Description |
Manufacturer |
| 6451 |
V62/07638-01XE |
Enhanced Product, -16V to +80V, Low- or High-side, High-Speed, Voltage Output Current Shunt Monitor 5-SOT-23 -55 to 125 |
Texas Instruments |
| 6452 |
V62/14615-01XE |
5A Brushed DC or Half-Bipolar Stepper Motor Driver (PWM Ctrl) 28-HTSSOP -55 to 125 |
Texas Instruments |
| 6453 |
VCG200 |
GUNN diode for H.F. power generator |
Tesla Elektronicke |
| 6454 |
VE13 |
VE/VF Types for Heavy Duty Applications |
AVX Corporation |
| 6455 |
VHD200, VHD144 |
2 Resistor Hermetic |
Vishay |
| 6456 |
VP16256 |
5V programmable FIR filter. For high performance commercial diigtal filter |
Mitel Semiconductor |
| 6457 |
VPA15 |
VIDEO PACK, VIDEO OUTPUT AMPLIFIER FOR HIGH-RESOLUTION CRT DISPLAYS |
SANYO |
| 6458 |
VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV |
SANYO |
| 6459 |
VPH03 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV |
SANYO |
| 6460 |
VPH05 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV |
SANYO |
| 6461 |
VPH06 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV |
SANYO |
| 6462 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6463 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6464 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6465 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6466 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6467 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6468 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6469 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6470 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6471 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6472 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6473 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6474 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6475 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6476 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6477 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 6478 |
WVL |
Subminiature, Shielded, Vertical or Horizontal Mount Inductors |
Vishay |
| 6479 |
XP06531 |
For high frequency amplification, oscillation, and mixing |
Panasonic |
| 6480 |
XPC750EC |
XPC750P/D XPC750P RISC Microprocessor Hardware Specifications |
Motorola |
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