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Datasheets for CORPO

Datasheets found :: 124584
Page: | 213 | 214 | 215 | 216 | 217 | 218 | 219 | 220 | 221 |
No. Part Name Description Manufacturer
6481 BCR16PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
6482 BCR16PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6483 BCR16PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6484 BCR16UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
6485 BCR1AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6486 BCR1AM-12 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
6487 BCR1AM-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
6488 BCR20A MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
6489 BCR20AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
6490 BCR20AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6491 BCR20AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6492 BCR20B MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
6493 BCR20B-10 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6494 BCR20B-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6495 BCR20C MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
6496 BCR20C-10 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6497 BCR20C-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6498 BCR20E MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE Mitsubishi Electric Corporation
6499 BCR20KM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6500 BCR25A MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
6501 BCR25B MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
6502 BCR2PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
6503 BCR2PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6504 BCR2PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6505 BCR3 LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
6506 BCR30 MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
6507 BCR30AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
6508 BCR30AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6509 BCR30AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
6510 BCR30GM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation


Datasheets found :: 124584
Page: | 213 | 214 | 215 | 216 | 217 | 218 | 219 | 220 | 221 |



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