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Datasheets for TH

Datasheets found :: 135135
Page: | 215 | 216 | 217 | 218 | 219 | 220 | 221 | 222 | 223 |
No. Part Name Description Manufacturer
6541 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
6542 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6543 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6544 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6545 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6546 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6547 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6548 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6549 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
6550 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
6551 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
6552 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
6553 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
6554 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6555 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6556 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6557 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6558 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6559 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6560 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6561 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
6562 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6563 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
6564 AM82731-001 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
6565 AM82731-003 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
6566 AM82731-006 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
6567 AM82731-012 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
6568 AM82731-025 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
6569 AM82731-050 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
6570 AM82731-075 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics


Datasheets found :: 135135
Page: | 215 | 216 | 217 | 218 | 219 | 220 | 221 | 222 | 223 |



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