No. |
Part Name |
Description |
Manufacturer |
6541 |
NM93CS56EN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6542 |
NM93CS56M8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6543 |
NM93CS56MM8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6544 |
NM93CS56MN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6545 |
NM93CS56N |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6546 |
NM93CS66EM8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6547 |
NM93CS66EN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6548 |
NM93CS66M8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6549 |
NM93CS66MM8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6550 |
NM93CS66MN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6551 |
NM93CS66N |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
6552 |
NMC27C1024Q12 |
120 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6553 |
NMC27C1024Q120 |
120 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6554 |
NMC27C1024Q15 |
150 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6555 |
NMC27C1024Q150 |
150 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6556 |
NMC27C1024Q17 |
170 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6557 |
NMC27C1024Q170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6558 |
NMC27C1024Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6559 |
NMC27C1024Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6560 |
NMC27C1024Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6561 |
NMC27C1024Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6562 |
NMC27C1024QE150 |
150 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6563 |
NMC27C1024QE170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6564 |
NMC27C1024QE200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6565 |
NMC27C1024QM170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6566 |
NMC27C1024QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6567 |
NMC27C1024V |
1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
6568 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
6569 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
6570 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
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