| No. |
Part Name |
Description |
Manufacturer |
| 6541 |
BA189 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 6542 |
BA190 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 6543 |
BA195 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 6544 |
BA215 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 6545 |
BA243 |
Silicon diode for switching applications |
IPRS Baneasa |
| 6546 |
BA244 |
Silicon diode for switching applications |
IPRS Baneasa |
| 6547 |
BA4116FV |
Communications LSIs > RF signal processing of portables application > IF for radio communication |
ROHM |
| 6548 |
BA4408F |
ICS for audio Applications |
ROHM |
| 6549 |
BA5404 |
ICs FOR AUDIO APPLICATIONS |
ROHM |
| 6550 |
BA7751ALS |
ICs for VTR Applications |
ROHM |
| 6551 |
BA7752LS |
ICs for VTR Applications |
ROHM |
| 6552 |
BA892-02L |
Diodes for Bandswitching in Tunerapplications |
Infineon |
| 6553 |
BAK-200, GAK-2 SERIES |
Strain Gage Application Kits |
Vishay |
| 6554 |
BAR50-02L |
Latest Silicon Discretes - PIN Diode for bandswitching applications |
Infineon |
| 6555 |
BAR63-07L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 6556 |
BAR65-02L |
Diodes for switching applications up to 3GHz |
Infineon |
| 6557 |
BAR88-07L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 6558 |
BAR88-099L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 6559 |
BAR90-02L |
Diodes for switching applications up to 3GHz |
Infineon |
| 6560 |
BAR90-07L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 6561 |
BAR90-099L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 6562 |
BAS116 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 6563 |
BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 6564 |
BAS125-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 6565 |
BAS125-04W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 6566 |
BAS125-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 6567 |
BAS125-05W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 6568 |
BAS125-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 6569 |
BAS125-06W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
| 6570 |
BAS125-07 |
Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) |
Siemens |
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