No. |
Part Name |
Description |
Manufacturer |
6571 |
OC603 DOT YELLOW |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
6572 |
OC604 |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
6573 |
OC604 DOT BLUE |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
6574 |
OC604 DOT GREEN |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
6575 |
OC604 DOT VIOLET |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
6576 |
OC604 DOT WHITE |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
6577 |
OC604 spez. |
Germanium PNP junction transistor, red point |
TELEFUNKEN |
6578 |
OC612 |
Germanium PNP junction HF transistor |
TELEFUNKEN |
6579 |
OC613 |
Germanium PNP junction HF transistor |
TELEFUNKEN |
6580 |
OC614 |
Germanium PNP junction transistor, RF and IF stages |
TELEFUNKEN |
6581 |
OC615 |
Germanium PNP junction transistor, USW stages |
TELEFUNKEN |
6582 |
OD603 |
Germanium PNP junction transistor, power output stages |
TELEFUNKEN |
6583 |
OD603/50 |
Germanium PNP junction transistor, power transistor with high blocking voltage |
TELEFUNKEN |
6584 |
OP900SL |
PN junction silicon photodiode |
Optek Technology |
6585 |
OS14 |
Germanium PNP alloy junction photo transistor |
TOSHIBA |
6586 |
OS18 |
Silicon NPN diffused junction photo transistor |
TOSHIBA |
6587 |
P1086 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
6588 |
P1087 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
6589 |
P4KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
6590 |
P4KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
6591 |
P4KE10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
6592 |
P4KE10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
6593 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
6594 |
P4KE100 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
6595 |
P4KE100 |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
6596 |
P4KE100 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
6597 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
6598 |
P4KE100A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
6599 |
P4KE100A |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
6600 |
P4KE100A |
100 V, 1 mA, glass passivated junction transient voltage suppressor |
TRSYS |
| | | |