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Datasheets for N EPIT

Datasheets found :: 8146
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No. Part Name Description Manufacturer
6571 MJE702 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
6572 MJE702 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
6573 MJE703 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
6574 MJE703 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
6575 MJE800 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6576 MJE800 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
6577 MJE800 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
6578 MJE800STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6579 MJE801 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6580 MJE801 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
6581 MJE801 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
6582 MJE801STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6583 MJE802 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6584 MJE802 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
6585 MJE802 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
6586 MJE802STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6587 MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6588 MJE803 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
6589 MJE803 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
6590 MJE803STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
6591 MM2483 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
6592 MM2484 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
6593 MM3000 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V Motorola
6594 MM3001 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V Motorola
6595 MM3002 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V Motorola
6596 MM3003 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V Motorola
6597 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
6598 MMBC1623L6 50 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
6599 MMBD4148 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components
6600 MMBD914 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components


Datasheets found :: 8146
Page: | 216 | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 |



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