No. |
Part Name |
Description |
Manufacturer |
6571 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
6572 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6573 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
6574 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6575 |
MJE800 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6576 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
6577 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6578 |
MJE800STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6579 |
MJE801 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6580 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
6581 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6582 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6583 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6584 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
6585 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6586 |
MJE802STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6587 |
MJE803 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6588 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
6589 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
6590 |
MJE803STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
6591 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
6592 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
6593 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
6594 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
6595 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
6596 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
6597 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
6598 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
6599 |
MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
6600 |
MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
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