| No. |
Part Name |
Description |
Manufacturer |
| 6601 |
BF245B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 6602 |
BF245C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6603 |
BF245C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 6604 |
BF247 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6605 |
BF247 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 6606 |
BF247A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6607 |
BF247A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 6608 |
BF247B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6609 |
BF247B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 6610 |
BF247C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6611 |
BF247C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 6612 |
BF256 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6613 |
BF256A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6614 |
BF256B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6615 |
BF256C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 6616 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
| 6617 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 6618 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
| 6619 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 6620 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 6621 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 6622 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 6623 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 6624 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 6625 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 6626 |
BFR30 |
N channel junction field effect transistor |
Mullard |
| 6627 |
BFR31 |
N channel junction field effect transistor |
Mullard |
| 6628 |
BFS21 |
Silicon N channel field effect transistor |
Mullard |
| 6629 |
BFS21A |
Silicon N channel field effect transistor |
Mullard |
| 6630 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| | | |
