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Datasheets for WO

Datasheets found :: 7892
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |
No. Part Name Description Manufacturer
6601 TC514101AP 4,194,304 WORD x 1 BIT DYNAMIC RAM TOSHIBA
6602 TC514101AP-60 4,194,304 WORD x 1 BIT DYNAMIC RAM TOSHIBA
6603 TC514101ASJ-60 4,194,304 WORD x 1 BIT DYNAMIC RAM TOSHIBA
6604 TC514260BFT-70 70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM TOSHIBA
6605 TC514260BFT-80 80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM TOSHIBA
6606 TC514260BJ-70 70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM TOSHIBA
6607 TC514260BJ-80 80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM TOSHIBA
6608 TC51832 Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM TOSHIBA
6609 TC51832F-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6610 TC51832F-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6611 TC51832F-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6612 TC51832FL-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6613 TC51832FL-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6614 TC51832FL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6615 TC51832P-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6616 TC51832P-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6617 TC51832P-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6618 TC51832PL-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6619 TC51832PL-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6620 TC51832PL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6621 TC51832SP-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6622 TC51832SP-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6623 TC51832SP-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6624 TC51832SPL-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6625 TC51832SPL-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6626 TC51832SPL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
6627 TC528128BJ-10 100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
6628 TC528128BJ-80 80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
6629 TC528128BZ-10 100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
6630 TC528128BZ-80 80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA


Datasheets found :: 7892
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |



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