| No. |
Part Name |
Description |
Manufacturer |
| 6601 |
1N5950C |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 6602 |
1N5950D |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 6603 |
1N5951 |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6604 |
1N5951 |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
| 6605 |
1N5951A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 6606 |
1N5951A |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6607 |
1N5951B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 6608 |
1N5951B |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
| 6609 |
1N5951B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 6610 |
1N5951B |
120 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 6611 |
1N5951B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 6612 |
1N5951C |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 6613 |
1N5951D |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 6614 |
1N5952 |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6615 |
1N5952 |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
| 6616 |
1N5952A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 6617 |
1N5952A |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6618 |
1N5952B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 6619 |
1N5952B |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
| 6620 |
1N5952B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 6621 |
1N5952B |
130 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 6622 |
1N5952B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 6623 |
1N5952C |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 6624 |
1N5952D |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 6625 |
1N5953 |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6626 |
1N5953 |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
| 6627 |
1N5953A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 6628 |
1N5953A |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6629 |
1N5953B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 6630 |
1N5953B |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
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