No. |
Part Name |
Description |
Manufacturer |
6601 |
TC5516AFL |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6602 |
TC5516AFL-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6603 |
TC5516AP |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6604 |
TC5516AP-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6605 |
TC5516APL |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6606 |
TC5516APL-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6607 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6608 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6609 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6610 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6611 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6612 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6613 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6614 |
TC5517CPL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
6615 |
TC55328J-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6616 |
TC55328J-20 |
20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6617 |
TC55328J-25 |
25ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6618 |
TC55328J-35 |
35ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6619 |
TC55328P-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6620 |
TC55328P-20 |
20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6621 |
TC55328P-25 |
25ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6622 |
TC55328P-35 |
35ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
6623 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6624 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6625 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6626 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6627 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6628 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6629 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6630 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
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