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Datasheets for S STATIC RAM

Datasheets found :: 7402
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |
No. Part Name Description Manufacturer
6601 TC5516AFL 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6602 TC5516AFL-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6603 TC5516AP 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6604 TC5516AP-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6605 TC5516APL 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6606 TC5516APL-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6607 TC5517CF-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6608 TC5517CF-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6609 TC5517CFL-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6610 TC5517CFL-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6611 TC5517CP-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6612 TC5517CP-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6613 TC5517CPL-15 150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6614 TC5517CPL-20 200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM TOSHIBA
6615 TC55328J-17 17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6616 TC55328J-20 20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6617 TC55328J-25 25ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6618 TC55328J-35 35ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6619 TC55328P-17 17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6620 TC55328P-20 20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6621 TC55328P-25 25ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6622 TC55328P-35 35ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
6623 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6624 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6625 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6626 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6627 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6628 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6629 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6630 TC5564AFL-15 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA


Datasheets found :: 7402
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |



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