| No. |
Part Name |
Description |
Manufacturer |
| 661 |
FSS210 |
V(dss): 40V; V(gss): +-24V; I(d): 9A; I(dp): 52A; 2.0W; DC/DC converter applications |
SANYO |
| 662 |
FST10040 |
100A, 40V ultra fast recovery rectifier |
MCC |
| 663 |
FST12040 |
120A, 40V ultra fast recovery rectifier |
MCC |
| 664 |
FST16040 |
160A, 40V ultra fast recovery rectifier |
MCC |
| 665 |
FST19040 |
200A, 40V ultra fast recovery rectifier |
MCC |
| 666 |
FST7140SM |
70A, 40V ultra fast recovery rectifier |
MCC |
| 667 |
FST8040 |
80A, 40V ultra fast recovery rectifier |
MCC |
| 668 |
FST8140SM |
80A, 40V ultra fast recovery rectifier |
MCC |
| 669 |
FST8340SL |
80A, 40V ultra fast recovery rectifier |
MCC |
| 670 |
FST8440SL |
80A, 40V ultra fast recovery rectifier |
MCC |
| 671 |
GES2218A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
| 672 |
GES2219A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
| 673 |
GES2221A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
| 674 |
GES2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
| 675 |
GES2904 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 676 |
GES2905 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 677 |
GES5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 678 |
GES5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 679 |
GES5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 680 |
GES5814 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
| 681 |
GES5816 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
| 682 |
GES5818 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
| 683 |
IRF1404ZSTRR |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 684 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 685 |
IRF6614TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
| 686 |
IRF6616 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 687 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 688 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 689 |
IRF7484QTR |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 690 |
IRF7737 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance. |
International Rectifier |
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