| No. |
Part Name |
Description |
Manufacturer |
| 661 |
EL2227CY |
Dual Very Low Noise Amplifier |
Intersil |
| 662 |
EL2227CY-T13 |
Dual Very Low Noise Amplifier |
Elantec Semiconductor |
| 663 |
EL2227CY-T13 |
Dual Very Low Noise Amplifier |
Intersil |
| 664 |
EL2227CY-T7 |
Dual Very Low Noise Amplifier |
Elantec Semiconductor |
| 665 |
EL2227CY-T7 |
Dual Very Low Noise Amplifier |
Intersil |
| 666 |
EN3309 |
5W Power Amplifier with Very Few External Parts for Car Audio |
ON Semiconductor |
| 667 |
ENA2011 |
5W Power Amplifier with Very Few External Parts for Car Audio |
ON Semiconductor |
| 668 |
ERC |
Military/Established Reliability, MIL-R-55182 Qualified, Type RNC, Very Low Noise, Verified Failure Rate, 100% Stabilization and Screening Tests, Controlled Temperature Coefficient |
Vishay |
| 669 |
ERL |
Military/Established Reliability, MIL-PRF-39017 Qualified, Type RLR, Verified Failure Rate, Excellent High Frequency Performance, Epoxy Coating Provides Superior Moisture Protection, Monthly Lot Acceptance Testing, Very Low Noise |
Vishay |
| 670 |
ESD6100 |
2-Channel Very Low Capacitance ESD Protection Device |
ON Semiconductor |
| 671 |
ESD7383 |
ESD Protection, 3-Line, Very Low Capacitance, for USB |
ON Semiconductor |
| 672 |
ESDAVLC8-4BN4 |
4-line very low capacitance Transil™ array for ESD protection |
ST Microelectronics |
| 673 |
FES26A |
1 Amp. Surface Mounted Very Fast Soft Recovery Glass Passivated Avalanche Diode |
Fagor |
| 674 |
FES26C |
1 Amp. Surface Mounted Very Fast Soft Recovery Glass Passivated Avalanche Diode |
Fagor |
| 675 |
GMA01U |
Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications |
SANYO |
| 676 |
GMA02 |
Silicon Epitaxial Planar Type Very High-Speed Switching Diode |
SANYO |
| 677 |
GT100 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 678 |
GT100/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 679 |
GT100/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 680 |
GT100/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 681 |
GT100/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 682 |
GT100/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 683 |
GT100/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 684 |
GT100/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 685 |
GT100/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 686 |
GT150 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 687 |
GT150/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 688 |
GT150/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 689 |
GT150/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 690 |
GT150/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| | | |
