| No. |
Part Name |
Description |
Manufacturer |
| 661 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 662 |
1N757A |
9.1V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 663 |
1N757A-1 |
9.1 V, 400 mW silicon zener diode |
BKC International Electronics |
| 664 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 665 |
1N758 |
10.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 666 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 667 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 668 |
1N758A |
10.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 669 |
1N758A-1 |
10 V, 400 mW silicon zener diode |
BKC International Electronics |
| 670 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 671 |
1N759 |
12.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 672 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 673 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 674 |
1N759A |
12.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 675 |
1N759A-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
| 676 |
1N759A-1 |
Silicon 500 mW Zener Diodes |
Microsemi |
| 677 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 678 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 679 |
1N823 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 680 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 681 |
1N825 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 682 |
1N825A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 683 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 684 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 685 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 686 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 687 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 688 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 689 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 690 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| | | |
