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Datasheets for 04C

Datasheets found :: 2574
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |
No. Part Name Description Manufacturer
661 K6R4004C1D-JI10 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
662 K6R4004C1D-KC10 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
663 K6R4004C1D-KI10 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
664 KB304C Pairs varicap for VHF tuning circuits Tesla Elektronicke
665 KDV804CM Variable capacitance diode (VCO) for tuning of separate resonant circuit and push-pull circuit in FM range, especially for car audio Korea Electronics (KEC)
666 KDV804CS Variable capacitance diode (VCO) for tuning of separate resonant circuit and push-pull circuit in FM range, especially for car audio Korea Electronics (KEC)
667 KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
668 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
669 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
670 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
671 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
672 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
673 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
674 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
675 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
676 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
677 KM416C1004CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
678 KM416C1004CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
679 KM416C1004CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
680 KM416C1004CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
681 KM416C1004CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
682 KM416C1004CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
683 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
684 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
685 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
686 KM416C1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
687 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
688 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
689 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
690 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic


Datasheets found :: 2574
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |



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