No. |
Part Name |
Description |
Manufacturer |
661 |
MZP4741C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 11 V. +-2% tolerance. |
Motorola |
662 |
MZP4741D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 11 V. +-1% tolerance. |
Motorola |
663 |
MZP4757A |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 51 V. +-5% tolerance. |
Motorola |
664 |
MZP4757C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 51 V. +-2% tolerance. |
Motorola |
665 |
MZP4757D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 51 V. +-1% tolerance. |
Motorola |
666 |
MZP4763A |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 91 V. +-5% tolerance. |
Motorola |
667 |
MZP4763C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 91 V. +-2% tolerance. |
Motorola |
668 |
MZP4763D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 91 V. +-1% tolerance. |
Motorola |
669 |
MZT2973 |
10 watt zener transient suppressor. Nom zener voltage 9.1 V. |
Motorola |
670 |
MZT2975 |
10 watt zener transient suppressor. Nom zener voltage 11 V. |
Motorola |
671 |
MZT2997 |
10 watt zener transient suppressor. Nom zener voltage 51 V. |
Motorola |
672 |
MZT3004 |
10 watt zener transient suppressor. Nom zener voltage 91 V. |
Motorola |
673 |
MZT3308 |
50 watt zener transient suppressor. Nom zener voltage 9.1 V. |
Motorola |
674 |
MZT3310 |
50 watt zener transient suppressor. Nom zener voltage 11 V. |
Motorola |
675 |
MZT3332 |
50 watt zener transient suppressor. Nom zener voltage 51 V. |
Motorola |
676 |
MZT3339 |
50 watt zener transient suppressor. Nom zener voltage 91 V. |
Motorola |
677 |
MZT4552 |
50 watt zener transient suppressor. Nom zener voltage 5.1 V. |
Motorola |
678 |
NCS6433 |
Wideband Quad 2:1 Video Switch |
ON Semiconductor |
679 |
NDL5302P |
150 mA, 1 V, light emitting diode |
NEC |
680 |
NDL5303P |
150 mA, 1 V, light emitting diode |
NEC |
681 |
NDL5303PFC |
150 mA, 1 V, light emitting diode |
NEC |
682 |
NGA-186 |
DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. |
Stanford Microdevices |
683 |
NGA-286 |
DC-6000 MHz, cascadable 50 ohm (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. |
Stanford Microdevices |
684 |
NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. |
Stanford Microdevices |
685 |
NGA-689 |
DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. |
Stanford Microdevices |
686 |
NGB15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
687 |
NGD15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
688 |
P4KE110C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 99.0 V, Vbr(max) = 121 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
689 |
P4KE180A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
690 |
P4KE180CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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