| No. |
Part Name |
Description |
Manufacturer |
| 661 |
IRFP340 |
11A, 400V, 0.550 Ohm, N-Channel Power MOSFET |
Intersil |
| 662 |
IRG4BC20MDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
International Rectifier |
| 663 |
IRGBF30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A) |
International Rectifier |
| 664 |
IRL2203 |
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A��) |
International Rectifier |
| 665 |
IS61LV6432-117PQ |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 666 |
IS61LV6432-117PQI |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 667 |
IS61LV6432-117TQ |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 668 |
IS61LV6432-117TQI |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 669 |
IS61S6432-117PQ |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 670 |
IS61S6432-117PQI |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 671 |
IS61S6432-117TQ |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 672 |
IS61S6432-117TQI |
117MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
| 673 |
IS61SP12832-117B |
117MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM |
ICSI |
| 674 |
IS61SP12832-117TQ |
117MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM |
ICSI |
| 675 |
IS61SP12836-117B |
117MHz; 5V; 128K x 36 synchronous pipelined static RAM |
ICSI |
| 676 |
IS61SP12836-117TQ |
117MHz; 5V; 128K x 36 synchronous pipelined static RAM |
ICSI |
| 677 |
IS61SP6464-117PQ |
117MHz; 3.3V; 64K x 64 synchronous pipelined static RAM |
ICSI |
| 678 |
IS61SP6464-117TQ |
117MHz; 3.3V; 64K x 64 synchronous pipelined static RAM |
ICSI |
| 679 |
ISL35111 |
11.1Gb/s Driver |
Intersil |
| 680 |
ISL36111 |
11.1Gb/s Lane Extender |
Intersil |
| 681 |
ISPLSI5512VA-110LB272 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 682 |
ISPLSI5512VA-110LB388 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 683 |
ISPLSI5512VA-110LQ208 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 684 |
ITC1100 |
1100 W, 50 V, 1030 MHz common base transistor |
GHz Technology |
| 685 |
ITF86182SK8T |
11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET |
Intersil |
| 686 |
JANSR2N7399 |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET |
Intersil |
| 687 |
KSC5031 |
1100 V, 8 A, NPN silicon transistor |
Samsung Electronic |
| 688 |
LF2246 |
11 x 10-bit Image Filter |
LOGIC Devices Incorporated |
| 689 |
LF2246QC15 |
11 x 10-bit Image Filter |
LOGIC Devices Incorporated |
| 690 |
LF2246QC25 |
11 x 10-bit Image Filter |
LOGIC Devices Incorporated |
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