| No. |
Part Name |
Description |
Manufacturer |
| 661 |
AP0132ND |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 662 |
AP0132WG |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 663 |
AP0140 |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 664 |
AP0140NA |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 665 |
AP0140NB |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 666 |
AP0140ND |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 667 |
AP0140WG |
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode |
Supertex Inc |
| 668 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 669 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 670 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 671 |
ARZ145T05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 672 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 673 |
ARZ145T24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 674 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 675 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 676 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 677 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 678 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 679 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 680 |
AS1700-NPN |
Semicustom bipolar array |
ASTEC Semiconductor |
| 681 |
AS1700-PWR |
Semicustom bipolar array |
ASTEC Semiconductor |
| 682 |
AS17XX |
Semicustom Bipolar Array |
ASTEC Semiconductor |
| 683 |
AS5C4008CW-15L_883C |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 684 |
AS5C4008CW-15L_IT |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 685 |
AS5C4008CW-15L_XT |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 686 |
AS5C4008CW-17L_883C |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 687 |
AS5C4008CW-17L_IT |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 688 |
AS5C4008CW-17L_XT |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 689 |
AS5C4008CW-20L_883C |
512K x 8 SRAM memory array |
Austin Semiconductor |
| 690 |
AS5C4008CW-20L_IT |
512K x 8 SRAM memory array |
Austin Semiconductor |
| | | |
