| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SK3503 |
N Channel enhancement MOS FET |
NEC |
| 662 |
2SK3503-T1 |
N Channel enhancement MOS FET |
NEC |
| 663 |
2SK3503-T2 |
N Channel enhancement MOS FET |
NEC |
| 664 |
2SK3576 |
N Channel enhancement MOS FET |
NEC |
| 665 |
2SK3576-T1B |
N Channel enhancement MOS FET |
NEC |
| 666 |
2SK3576-T2B |
N Channel enhancement MOS FET |
NEC |
| 667 |
2SK3577 |
N Channel enhancement MOS FET |
NEC |
| 668 |
2SK3577-T1B |
N Channel enhancement MOS FET |
NEC |
| 669 |
2SK3577-T2B |
N Channel enhancement MOS FET |
NEC |
| 670 |
2SK3663 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 671 |
2SK3664 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 672 |
2SK3749 |
Nch enhancement type MOS FET |
NEC |
| 673 |
2SK3995 |
Silicon N-channel enhancement MOSFET |
Panasonic |
| 674 |
2SK4174 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 675 |
2SK4208 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 676 |
2SK536 |
N-Channel Enhancement MOS Silicon FET Analog Switch Applications |
SANYO |
| 677 |
2SK583 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications |
SANYO |
| 678 |
2SK669 |
N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch Applications |
SANYO |
| 679 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 680 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 681 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 682 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 683 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 684 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 685 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 686 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 687 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 688 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 689 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 690 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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