No. |
Part Name |
Description |
Manufacturer |
661 |
KM416V1004BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
662 |
KM416V1004BJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
663 |
KM416V1004BJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
664 |
KM416V1004BJ-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
665 |
KM416V1004BT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
666 |
KM416V1004BT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
667 |
KM416V1004BT-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
668 |
KM416V1004BT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
669 |
KM416V1004BT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
670 |
KM416V1004BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
671 |
KM416V1004C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
672 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
673 |
KM416V1004CJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
674 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
675 |
KM416V1004CJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
676 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
677 |
KM416V1004CJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
678 |
KM416V1004CJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
679 |
KM416V1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
680 |
KM416V1004CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
681 |
KM416V1004CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
682 |
KM416V1004CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
683 |
KM416V1004CT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
684 |
KM416V1004CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
685 |
KM416V1004CT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
686 |
KM416V1004CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
687 |
KM416V1004CT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
688 |
KM416V1004CT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
689 |
KM416V1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
690 |
KM416V1004CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
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