| No. |
Part Name |
Description |
Manufacturer |
| 661 |
BU406 |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
USHA India LTD |
| 662 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 663 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 664 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 665 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 666 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 667 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 668 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 669 |
BU407 |
Power 7A 150V DEF NPN |
ON Semiconductor |
| 670 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 671 |
BU407 |
NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 672 |
BU407 |
NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 673 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 674 |
BU407H |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 675 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 676 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 677 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 678 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 679 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 680 |
BU508AF |
High voltage NPN power transistor for standard definition CRT display |
ST Microelectronics |
| 681 |
BU508AW |
High voltage NPN power transistor for standard definition CRT display |
ST Microelectronics |
| 682 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 683 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 684 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 685 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 686 |
BU607 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 687 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 688 |
BU608 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 689 |
BU608D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 690 |
BUH417 |
V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor |
SGS Thomson Microelectronics |
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