| No. |
Part Name |
Description |
Manufacturer |
| 661 |
IRS2304SPBF |
Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels |
International Rectifier |
| 662 |
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 663 |
IRS2607DSPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels |
International Rectifier |
| 664 |
IRS2608DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 665 |
IRS2609DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 666 |
ISL6534 |
Dual PWM Controller and LDO Regulator 2%; DDR or Independent Mode; Freq = 300kHz nominal (adjustable 100 to 1000kHz) |
Intersil |
| 667 |
ISL97686 |
4-Channel LED Driver with Independent Channel Control for Dynamic Dimming |
Intersil |
| 668 |
ISL97691 |
2.4V LED Driver with Independent Analog and PWM Dimming Controls of 2 Backlights for 3D Application |
Intersil |
| 669 |
J110 |
N-Channel - Depletion |
ON Semiconductor |
| 670 |
J110-D |
JFET - General Purpose N-Channel - Depletion |
ON Semiconductor |
| 671 |
J110RLRA |
N-Channel - Depletion |
ON Semiconductor |
| 672 |
J111-D |
JFET Chopper Transistors N-Channel - Depletion |
ON Semiconductor |
| 673 |
J112 |
JFET Chopper Transistor (N-Channel- Depletion) |
Motorola |
| 674 |
J308-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion |
ON Semiconductor |
| 675 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 676 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 677 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 678 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 679 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 680 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 681 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 682 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 683 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 684 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 685 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 686 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 687 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 688 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 689 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 690 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
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