| No. |
Part Name |
Description |
Manufacturer |
| 661 |
ER5911-IJ |
1K (128 X 8 OR 64 X 16) SERIAL ELECTRICALLY ERASABLE PROM |
Microchip |
| 662 |
ER5911-IP |
1K (128 X 8 OR 64 X 16) SERIAL ELECTRICALLY ERASABLE PROM |
Microchip |
| 663 |
ER5911-J |
1K (128 X 8 OR 64 X 16) SERIAL ELECTRICALLY ERASABLE PROM |
Microchip |
| 664 |
ER5911-P |
1K (128 X 8 OR 64 X 16) SERIAL ELECTRICALLY ERASABLE PROM |
Microchip |
| 665 |
FGL40N150 |
Electrical Characteristics of the IGBT |
Fairchild Semiconductor |
| 666 |
FP1/2P, 1P, 2P, 3P, 69P |
Pulse Withstanding Protective, Lightning Withstanding Characteristics along with Resistor Functionality, Sharper Fusing Characteristic than the Standard Flameproof Product Line (Fusible), Protects Against Electrical Hazards |
Vishay |
| 667 |
FP10R06KL4 |
Elektrische Eigenschaften / Electrical properties |
Eupec |
| 668 |
FP15R06KL4 |
Elektrische Eigenschaften / Electrical properties |
Eupec |
| 669 |
HC711E9 |
APPENDIX A ELECTRICAL CHARACTERISTICS |
Freescale (Motorola) |
| 670 |
HD404344 |
ELECTRICAL SPECIFICATIONS |
Hitachi Semiconductor |
| 671 |
HD6433258P10 |
ELECTRICAL SPECIFICATIONS |
Hitachi Semiconductor |
| 672 |
HD647180 |
ELECTRICAL CHARACTERISTICS |
Hitachi Semiconductor |
| 673 |
HD647180X-4 |
ELECTRICAL CHARACTERISTICS |
Hitachi Semiconductor |
| 674 |
HD647180X-6 |
ELECTRICAL CHARACTERISTICS |
Hitachi Semiconductor |
| 675 |
HD647180X-8 |
ELECTRICAL CHARACTERISTICS |
Hitachi Semiconductor |
| 676 |
HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
Hitachi Semiconductor |
| 677 |
HN48016 |
2048 WORD X 8 BIT ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM |
Hitachi Semiconductor |
| 678 |
HN48016P |
2048 WORD X 8 BIT ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM |
Hitachi Semiconductor |
| 679 |
HN58C65 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
Hitachi Semiconductor |
| 680 |
HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
Hitachi Semiconductor |
| 681 |
HN58C65P-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
Hitachi Semiconductor |
| 682 |
IM5603 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY |
Intersil |
| 683 |
IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY |
Intersil |
| 684 |
IS24C16 |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 685 |
IS24C16-G |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 686 |
IS24C16-GI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 687 |
IS24C16-P |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 688 |
IS24C16-PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 689 |
IS93C46-3 |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 690 |
IS93C46-3G |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
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