| No. |
Part Name |
Description |
Manufacturer |
| 661 |
LC66566B |
Datasheet in Japanese |
SANYO |
| 662 |
LC875164A |
Datasheet in Japanese |
SANYO |
| 663 |
LF155AH |
+/-22 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 664 |
LF155J |
+/-22 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 665 |
LF156J |
+/-22 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 666 |
LF157AH |
+/-22 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 667 |
LF157H |
+/-22 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 668 |
LF157J |
+/-22 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 669 |
LF355BH |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 670 |
LF355BJ |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 671 |
LF355J |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 672 |
LF356BJ |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 673 |
LF356J |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 674 |
LF357BH |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 675 |
LF357BJ |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 676 |
LF357BM |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 677 |
LF357J |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 678 |
LH1465AAE |
LH1465AB/AAE ISDN dc Termination IC Data Sheet Advisory |
Agere Systems |
| 679 |
LH1465AB |
LH1465AB/AAE ISDN dc Termination IC Data Sheet Advisory |
Agere Systems |
| 680 |
M1967M |
SAW Components Data Sheet M 1967 M |
EPCOS |
| 681 |
MBS1205 |
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 682 |
MBS1205-22 |
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 683 |
MBS1210-22 |
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 684 |
MBS1215-22 |
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 685 |
MBS1220-22 |
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 686 |
MBS1230-22 |
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
| 687 |
MC68HC908QY4SM |
MC68HC908QY4, MC68HC908QT4, MC68HC908QY2, MC68HC908QT2, MC68HC908QY1, MC68HC908QT1 Data Sheet Summary |
Motorola |
| 688 |
MHW2821_D |
MHW2821 Technical Data Sheet UHF Silicon FET Power Amplifiers |
Motorola |
| 689 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 690 |
NC921 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of NC921, see the Electrical Characteristics table) |
NEC |
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