No. |
Part Name |
Description |
Manufacturer |
661 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
662 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
663 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
664 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
665 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
666 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
667 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
668 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
669 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
670 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
671 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
672 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
673 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
674 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
675 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
676 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
677 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
678 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
679 |
2N7000 |
N-channel enhancement mode field-effect transistor |
Philips |
680 |
2N7000_D26Z |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
681 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
682 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
683 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
684 |
2N7002 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Panjit International Inc |
685 |
2N7002 |
N-channel enhancement mode field-effect transistor |
Philips |
686 |
2N7002-01 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
687 |
2N7002DW |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
688 |
2N7002E |
60V; 0.25A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
689 |
2N7002K |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
690 |
2N7002KW |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
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