| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SK3749 |
Nch enhancement type MOS FET |
NEC |
| 662 |
2SK3995 |
Silicon N-channel enhancement MOSFET |
Panasonic |
| 663 |
2SK4174 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 664 |
2SK4208 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 665 |
2SK536 |
N-Channel Enhancement MOS Silicon FET Analog Switch Applications |
SANYO |
| 666 |
2SK583 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications |
SANYO |
| 667 |
2SK669 |
N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch Applications |
SANYO |
| 668 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 669 |
3C91C |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
| 670 |
3C92C |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
| 671 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 672 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 673 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 674 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 675 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 676 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 677 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 678 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 679 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 680 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 681 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 682 |
3N163 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 683 |
3N163 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 684 |
3N163 |
P-Channel Enhancement Mode MOSFET |
Linear Systems |
| 685 |
3N163-4 |
P-CHANNEL ENHANCEMENT MODE |
Linear Systems |
| 686 |
3N164 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 687 |
3N164 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 688 |
3N164 |
P-Channel Enhancement Mode MOSFET |
Linear Systems |
| 689 |
3N165 |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
| 690 |
3N165 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
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