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Datasheets for ERAL E

Datasheets found :: 962
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |
No. Part Name Description Manufacturer
661 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
662 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
663 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
664 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
665 IRFF310 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
666 IRFF311 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
667 IRFF312 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
668 IRFF313 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
669 MCA230 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. General Electric Solid State
670 MCA231 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. General Electric Solid State
671 MCA235 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. General Electric Solid State
672 MCS21 PHOTON COUPLED ISOLATOR General Electric Solid State
673 MCS2400 Photon coupled isolator. GaAs infrared emitting diode & light activated SCR. General Electric Solid State
674 MCS2401 PHOTON COUPLED ISOLATOR General Electric Solid State
675 MCT210 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. General Electric Solid State
676 MICROWAVE NOTE Microwave Semiconductors general explanatory notes Philips
677 MJ15001 Silicon N-P-N power transistor. 140V, 200W. General Electric Solid State
678 MJ15002 Silicon P-N-P power transistor. -140V, 200W. General Electric Solid State
679 MJ15003 Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. General Electric Solid State
680 MJ15004 Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. General Electric Solid State
681 MJ15022 Silicon N-P-N epitaxial-base high power transistor. General Electric Solid State
682 MJ15024 Silicon N-P-N epitaxial-base high power transistor. General Electric Solid State
683 MJ16010 5 A SwitchMax II power transistor. High voltage N-P-N type. General Electric Solid State
684 MJ16012 5 A SwitchMax II power transistor. High voltage N-P-N type. General Electric Solid State
685 MJ2955 Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. General Electric Solid State
686 MJE16002 5 A SwitchMax II power transistor. High voltage N-P-N type. General Electric Solid State
687 MJE16004 5 A SwitchMax II power transistor. High voltage N-P-N type. General Electric Solid State
688 MJH6010 5 A SwitchMax II power transistor. High voltage N-P-N type. General Electric Solid State
689 MJH6012 5 A SwitchMax II power transistor. High voltage N-P-N type. General Electric Solid State
690 MM551H High Reliability High Voltage Analog Switch General Electric Solid State


Datasheets found :: 962
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |



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