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Datasheets for GE SOT

Datasheets found :: 1040
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |
No. Part Name Description Manufacturer
661 MAX6726KAZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
662 MAX6726KAZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
663 MAX6726KAZWD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
664 MAX6726KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
665 MAX6727 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
666 MAX6727KALTD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
667 MAX6727KALTD3+T Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
668 MAX6727KALTD3-T Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
669 MAX6727KAMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
670 MAX6727KAMSD3-T Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
671 MAX6727KARDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
672 MAX6727KARHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
673 MAX6727KARVD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
674 MAX6727KARVD3+T Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
675 MAX6727KARVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
676 MAX6727KARYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
677 MAX6727KASDD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
678 MAX6727KASDD3+T Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
679 MAX6727KASDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
680 MAX6727KASFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
681 MAX6727KASHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
682 MAX6727KASVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
683 MAX6727KASYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
684 MAX6727KATED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
685 MAX6727KATGD3+ Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits MAXIM - Dallas Semiconductor
686 MAX6727KATGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
687 MAX6727KATID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
688 MAX6727KATWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
689 MAX6727KATZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
690 MAX6727KAVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 1040
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |



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