| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 662 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 663 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 664 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 665 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 666 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 667 |
2N464 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 668 |
2N465 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 669 |
2N466 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 670 |
2N467 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 671 |
2N499 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 672 |
2N499A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 673 |
2N502 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 674 |
2N502A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 675 |
2N502B |
MADT® PNP communications types - germanium transistor |
Sprague |
| 676 |
2N503 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 677 |
2N504 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 678 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 679 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 680 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 681 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 682 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 683 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 684 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 685 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 686 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 687 |
2N588 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 688 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 689 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 690 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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