| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
| 662 |
2SC105 |
Industrial Transistor Specification Table |
TOSHIBA |
| 663 |
2SC1077 |
Industrial Transistor Specification Table |
TOSHIBA |
| 664 |
2SC108A |
Industrial Transistor Specification Table |
TOSHIBA |
| 665 |
2SC109A |
Industrial Transistor Specification Table |
TOSHIBA |
| 666 |
2SC1120 |
Industrial Transistor Specification Table |
TOSHIBA |
| 667 |
2SC1121 |
Industrial Transistor Specification Table |
TOSHIBA |
| 668 |
2SC1122 |
Industrial Transistor Specification Table |
TOSHIBA |
| 669 |
2SC1164 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 670 |
2SC1165 |
Industrial Transistor Specification Table |
TOSHIBA |
| 671 |
2SC1168 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 672 |
2SC1193 |
Industrial Transistor Specification Table |
TOSHIBA |
| 673 |
2SC1200 |
Industrial Transistor Specification Table |
TOSHIBA |
| 674 |
2SC1236 |
Industrial Transistor Specification Table |
TOSHIBA |
| 675 |
2SC1475 |
SPECIFICATION TRANSISTORS, DIODES |
Unknow |
| 676 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 677 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 678 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 679 |
2SC1688 |
For high-frequency amplification |
Panasonic |
| 680 |
2SC1810 |
SPECIFICATION TRANSISTORS,DIODES |
SONY |
| 681 |
2SC1816 |
SPECIFICATION TRANSISTORSS,DIODES |
Unknow |
| 682 |
2SC1908 |
SPECIFICATION TRANSISTOR,DIODES |
Unknow |
| 683 |
2SC199 |
Industrial Transistor Specification Table |
TOSHIBA |
| 684 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 685 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 686 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 687 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 688 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 689 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 690 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
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