| No. |
Part Name |
Description |
Manufacturer |
| 661 |
SH80J11 |
Silicon alloy-diffused junction high speed thyristor 100A 600V |
TOSHIBA |
| 662 |
SH80L11 |
Silicon alloy-diffused junction high speed thyristor 100A 800V |
TOSHIBA |
| 663 |
SM |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 664 |
SM095G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 665 |
SM095G1 |
Fusible alloy thermal pellet type,0.5A rated current |
NEC |
| 666 |
SM10D14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 10A 200V |
TOSHIBA |
| 667 |
SM10G14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 10A 400V |
TOSHIBA |
| 668 |
SM110G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 669 |
SM110G1 |
Fusible alloy thermal pellet type,0.5A rated current |
NEC |
| 670 |
SM126G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 671 |
SM126G1 |
Fusible alloy thermal pellet type,0.5A rated current |
NEC |
| 672 |
SM130G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 673 |
SM130G1 |
Fusible alloy thermal pellet type,0.5A rated current |
NEC |
| 674 |
SM134G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 675 |
SM145G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE, 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current |
NEC |
| 676 |
SM145G1 |
Fusible alloy thermal pellet type,0.5A rated current |
NEC |
| 677 |
SM30D12 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 30A 200V |
TOSHIBA |
| 678 |
SM30G12 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 30A 450V |
TOSHIBA |
| 679 |
SM6B14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 6A 100V |
TOSHIBA |
| 680 |
SM6D14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 6A 200V |
TOSHIBA |
| 681 |
SM6G14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 6A 400V |
TOSHIBA |
| 682 |
TC125 |
The TC125/6 step-up (Boost) switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These devices employ pulse frequency modulation (PFM) for minimum supply current at l |
Microchip |
| 683 |
TC126 |
The TC125/6 step-up (Boost) switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These devices employ pulse frequency modulation (PFM) for minimum supply current at l |
Microchip |
| 684 |
TID29A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 685 |
TID30A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 686 |
UPD65301 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 687 |
UPD65301GA-XXX-9EU |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 688 |
UPD65302 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 689 |
UPD65303 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 690 |
UPD65304 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
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