| No. |
Part Name |
Description |
Manufacturer |
| 661 |
05WS7 |
05W 05WS SERIES ZENER DIODES |
Leshan Radio Company |
| 662 |
05WS9 |
05W 05WS SERIES ZENER DIODES |
Leshan Radio Company |
| 663 |
0603B102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 664 |
0603B104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 665 |
0603F102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 666 |
0603F104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 667 |
0603N101J500NT |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 668 |
0603N104 |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 669 |
0603N104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 670 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 671 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 672 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 673 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 674 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 675 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 676 |
071 |
SILICON CONTROLLED RECTIFIER |
Microsemi |
| 677 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 678 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 679 |
07104GOA |
Silicon Controlled Rectifier |
Microsemi |
| 680 |
07105GOA |
Silicon Controlled Rectifier |
Microsemi |
| 681 |
07106GOA |
Silicon Controlled Rectifier |
Microsemi |
| 682 |
07108GOA |
Silicon Controlled Rectifier |
Microsemi |
| 683 |
07110GOA |
Silicon Controlled Rectifier |
Microsemi |
| 684 |
07112GOA |
Silicon Controlled Rectifier |
Microsemi |
| 685 |
08003GOA |
Silicon Controlled Rectifier |
Microsemi |
| 686 |
08003GOB |
Silicon Controlled Rectifier |
Microsemi |
| 687 |
08003GOC |
Silicon Controlled Rectifier |
Microsemi |
| 688 |
08003GOD |
Silicon Controlled Rectifier |
Microsemi |
| 689 |
08004GOA |
Silicon Controlled Rectifier |
Microsemi |
| 690 |
08004GOB |
Silicon Controlled Rectifier |
Microsemi |
| | | |
