No. |
Part Name |
Description |
Manufacturer |
661 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
662 |
3N145 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
663 |
3N146 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
664 |
3N147 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
665 |
3N148 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
666 |
3N149 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
667 |
3N150 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
668 |
3N151 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
669 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
670 |
3N155 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
671 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
672 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
673 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
674 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
675 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
676 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
677 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
678 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
679 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
680 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
681 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
682 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
683 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
684 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
685 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
686 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
687 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
688 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
689 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
690 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| | | |