| No. |
Part Name |
Description |
Manufacturer |
| 661 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
| 662 |
3N145 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 663 |
3N146 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 664 |
3N147 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 665 |
3N148 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 666 |
3N149 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 667 |
3N150 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 668 |
3N151 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 669 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 670 |
3N155 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 671 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 672 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 673 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 674 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 675 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 676 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 677 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 678 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 679 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 680 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 681 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 682 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 683 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 684 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 685 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 686 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 687 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 688 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 689 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 690 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
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