| No. |
Part Name |
Description |
Manufacturer |
| 661 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 662 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 663 |
20KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 664 |
20KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 665 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 666 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 667 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 668 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 669 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 670 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 671 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
| 672 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
| 673 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
| 674 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
| 675 |
2729-125 |
Pulsed Power S-Band (Si) |
Microsemi |
| 676 |
2729-170 |
Pulsed Power S-Band (Si) |
Microsemi |
| 677 |
2729-300P |
Pulsed Power S-Band (Si) |
Microsemi |
| 678 |
2731-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 679 |
2731-20 |
Pulsed Power S-Band (Si) |
Microsemi |
| 680 |
2731-200P |
Pulsed Power S-Band (Si) |
Microsemi |
| 681 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 682 |
2931-150 |
Pulsed Power S-Band (Si) |
Microsemi |
| 683 |
2962 |
DUAL SOLENOID/MOTOR DRIVER .PULSE-WIDTH MODULATED CURRENT CONTROL |
Allegro MicroSystems |
| 684 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 685 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 686 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 687 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 688 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 689 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 690 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
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