| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SC4617EBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 662 |
2SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
ST Microelectronics |
| 663 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 664 |
2SK3704 |
N-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 665 |
2SK3815 |
General-Purpose Switching Device Applications |
SANYO |
| 666 |
2W005 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 667 |
2W01 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 668 |
2W02 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 669 |
2W04 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 670 |
2W06 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 671 |
2W08 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 672 |
2W10 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 673 |
300LD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 674 |
300LD11A |
General-Purpose Silicon Rectifiers 400A |
TOSHIBA |
| 675 |
300ND11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 676 |
300ND11A |
General-Purpose Silicon Rectifiers 400A |
TOSHIBA |
| 677 |
300QD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 678 |
300QD11A |
General-Purpose Silicon Rectifiers 400A |
TOSHIBA |
| 679 |
300TD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 680 |
300TD11A |
General-Purpose Silicon Rectifiers 400A |
TOSHIBA |
| 681 |
300WD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 682 |
300WD11A |
General-Purpose Silicon Rectifiers 400A |
TOSHIBA |
| 683 |
300YD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 684 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 685 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 686 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 687 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 688 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 689 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 690 |
318-05 |
Motorola case standard profile, dimensions, similar with TO-236AA |
Motorola |
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