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Datasheets for SIGNE

Datasheets found :: 4328
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No. Part Name Description Manufacturer
661 2SD2309 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
662 2SD2388 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
663 2SD2450 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
664 2SD2451 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
665 2SD2452 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
666 2SD313 NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. USHA India LTD
667 2SD880Y NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. USHA India LTD
668 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
669 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
670 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
671 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
672 3135-45 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
673 3135-7 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
674 3207A Quad BIPOLAR-TO-MOS Clock Driver Signetics
675 3207A-1 Quad BIPOLAR-TO-MOS Clock Driver Signetics
676 35PD10M The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... Anadigics Inc
677 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... Anadigics Inc
678 3N155 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
679 3N155A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
680 3N156 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
681 3N156A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
682 4001 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
683 4003 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
684 40693 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State
685 40694 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State
686 40695 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State
687 40696 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State
688 40697 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State
689 40698 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State
690 40699 Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits RCA Solid State


Datasheets found :: 4328
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