| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SD666A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
Hitachi Semiconductor |
| 662 |
2SD673A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A |
Unknow |
| 663 |
2SD716 |
Silicon NPN triple diffused power transistor, complementary to 2SB686 |
TOSHIBA |
| 664 |
2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 665 |
2SD758 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 666 |
2SD845 |
Silicon NPN triple diffused power transistor, complementary to 2SB755 |
TOSHIBA |
| 667 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 668 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 669 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 670 |
2SK416 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
| 671 |
2SK416L |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
| 672 |
2SK416S |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
| 673 |
3275 |
COMPLEMENTARY-OUTPUT HALL-EFFECT LATCH |
Allegro MicroSystems |
| 674 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 675 |
42051-125 |
12V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 676 |
42051-145 |
14V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 677 |
42051-155 |
15V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 678 |
42051-165 |
16V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 679 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 680 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 681 |
4E200M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 682 |
4E200M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 683 |
4E20M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 684 |
4E20M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 685 |
4E30M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 686 |
4E30M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 687 |
4E40M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 688 |
4E40M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 689 |
4E50M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 690 |
4E50M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
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