No. |
Part Name |
Description |
Manufacturer |
661 |
CR03AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
662 |
CR04 |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
663 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
664 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
665 |
CR04AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
666 |
CR04AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
667 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
668 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
669 |
CR05AS-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
670 |
CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
671 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
672 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
673 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
674 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
675 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
676 |
CR10CY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
677 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
678 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
679 |
CR12AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
680 |
CR12AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
681 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
682 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
683 |
CR20EY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
684 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
685 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
686 |
CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
687 |
CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
688 |
CR2AM-8A |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
689 |
CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
690 |
CR3EM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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