| No. |
Part Name |
Description |
Manufacturer |
| 661 |
1N1833R |
Diffused silicon power zener diodes 10W 68V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 662 |
1N1833RA |
Diffused silicon power zener diodes 10W 68V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 663 |
1N1834C |
Diffused silicon power zener diodes 10W 75V, Double anode |
Texas Instruments |
| 664 |
1N1834R |
Diffused silicon power zener diodes 10W 75V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 665 |
1N1834RA |
Diffused silicon power zener diodes 10W 75V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 666 |
1N1835C |
Diffused silicon power zener diodes 10W 82V, Double anode |
Texas Instruments |
| 667 |
1N1835R |
Diffused silicon power zener diodes 10W 82V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 668 |
1N1835RA |
Diffused silicon power zener diodes 10W 82V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 669 |
1N1836C |
Diffused silicon power zener diodes 10W 91V, Double anode |
Texas Instruments |
| 670 |
1N1836R |
Diffused silicon power zener diodes 10W 91V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 671 |
1N1836RA |
Diffused silicon power zener diodes 10W 91V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 672 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
| 673 |
1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) |
BKC International Electronics |
| 674 |
1N192 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 675 |
1N195 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 676 |
1N198 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 677 |
1N198A |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 678 |
1N198B |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 679 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
| 680 |
1N265 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 681 |
1N266 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 682 |
1N267 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 683 |
1N270 |
100 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 684 |
1N270JTXV |
100 V, 60 mA, gold bonded germanium diode |
BKC International Electronics |
| 685 |
1N276 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 686 |
1N277 |
110 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 687 |
1N278 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 688 |
1N279 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 689 |
1N2804B |
50 Watt Silicon Zener Diode, TO-3 case, 6.8V, tolerance ±5% |
Transitron Electronic |
| 690 |
1N2805B |
50 Watt Silicon Zener Diode, TO-3 case, 7.5V, tolerance ±5% |
Transitron Electronic |
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