| No. |
Part Name |
Description |
Manufacturer |
| 6631 |
MDU3C SERIES |
TRIPLE, HCMOS-INTERFACED FIXED DELAY LINE |
Data Delay Devices Inc |
| 6632 |
MDU3C-100 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
| 6633 |
MDU3C-100A2 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
| 6634 |
MDU3C-100B2 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
| 6635 |
MDU3C-100M |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
| 6636 |
MDU3C-100MC2 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
| 6637 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 6638 |
MJ2267 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
| 6639 |
MJ2268 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
| 6640 |
MMBZ6V2AL |
Discrete - Protection Devices - Zener TVSs |
Diodes |
| 6641 |
MMBZ6V2AL-7-F |
Discrete - Protection Devices - Zener TVSs |
Diodes |
| 6642 |
MPT20 |
Plastic silicon 3-layer bilateral triggers are two-terminal devices that exibit bi-directional negative resistantce switching characteristics |
Motorola |
| 6643 |
MUR105S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6644 |
MUR110S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6645 |
MUR115S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6646 |
MUR120S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6647 |
MUR140S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6648 |
MUR160A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6649 |
MUR160S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6650 |
MUR190A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6651 |
MUR305S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6652 |
MUR310S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6653 |
MUR315S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6654 |
MUR320S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6655 |
MUR340S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6656 |
MUR360S |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 6657 |
NESG2021M16 |
NPN SiGe HIGH FREQUENCY TRANSISTOR |
California Micro Devices Corp |
| 6658 |
NESG2021M16-T3 |
NPN SiGe HIGH FREQUENCY TRANSISTOR |
California Micro Devices Corp |
| 6659 |
NM95MS14 |
Plug and Play Front-End Devices for ISA-Bus Systems |
National Semiconductor |
| 6660 |
NM95MS14VBH |
Plug n Play Front-End Devices for ISA-Bus Systems |
National Semiconductor |
| | | |
