No. |
Part Name |
Description |
Manufacturer |
6631 |
UPD45128841G5-A10-9JF |
128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 10ns, 3.3V |
Elpida Memory |
6632 |
UPD45128841G5-A75-9JF |
128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 7.5ns, 3.3V |
Elpida Memory |
6633 |
UPD45128841G5-A80-9JF |
128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 8ns, 3.3V |
Elpida Memory |
6634 |
V62/13622-01XE |
Digital PWM System Controller with 4-bit, 6-bit, or 8-bit VID Support UCD9222-EP 48-VQFN -55 to 115 |
Texas Instruments |
6635 |
V62/14603-01XE |
Digital PWM System Controller with 4-bit, 6-bit, or 8-bit VID Support 64-VQFN -55 to 125 |
Texas Instruments |
6636 |
V62C18164096L-100BI |
256K x 16, CMOS STATIC RAM, low power, 100ns, operating voltage =1.8V � 2.3V |
Mosel Vitelic Corp |
6637 |
V62C18164096L-85B |
256K x 16, CMOS STATIC RAM, low power, 85ns, operating voltage =1.8V � 2.3V |
Mosel Vitelic Corp |
6638 |
V62C18164096L-85BI |
256K x 16, CMOS STATIC RAM, low power, 85ns, operating voltage =1.8V � 2.3V |
Mosel Vitelic Corp |
6639 |
V62C18164096LL-100B |
256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V � 2.3V |
Mosel Vitelic Corp |
6640 |
V62C18164096LL-85B |
256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V � 2.3V |
Mosel Vitelic Corp |
6641 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6642 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6643 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6644 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6645 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6646 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6647 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6648 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6649 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6650 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6651 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6652 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6653 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6654 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6655 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6656 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
6657 |
W83627THF |
LPC Interface I/O plus KBC, Game/MIDI Port, H/W Monitor, ACPI, On Now Functions, DC Fan Ctrl |
Winbond Electronics |
6658 |
X1226 |
Real time clock/calendar with dual alarms, programmable frequency output, on-chip oscillator compensation |
Xicor |
6659 |
X1228 |
Real time clock/calendar with dual alarms, watchdog timer, adjustable low voltage reset, active low reset, programmable frequency output, on-chip oscillator compensation |
Xicor |
6660 |
XC6201P132LB |
250mA positive voltage regulator, tolerance 2%, output 1.3V |
Torex Semiconductor |
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