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Datasheets found :: 8266
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No. Part Name Description Manufacturer
6631 UPD45128841G5-A10-9JF 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 10ns, 3.3V Elpida Memory
6632 UPD45128841G5-A75-9JF 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 7.5ns, 3.3V Elpida Memory
6633 UPD45128841G5-A80-9JF 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 8ns, 3.3V Elpida Memory
6634 V62/13622-01XE Digital PWM System Controller with 4-bit, 6-bit, or 8-bit VID Support UCD9222-EP 48-VQFN -55 to 115 Texas Instruments
6635 V62/14603-01XE Digital PWM System Controller with 4-bit, 6-bit, or 8-bit VID Support 64-VQFN -55 to 125 Texas Instruments
6636 V62C18164096L-100BI 256K x 16, CMOS STATIC RAM, low power, 100ns, operating voltage =1.8V � 2.3V Mosel Vitelic Corp
6637 V62C18164096L-85B 256K x 16, CMOS STATIC RAM, low power, 85ns, operating voltage =1.8V � 2.3V Mosel Vitelic Corp
6638 V62C18164096L-85BI 256K x 16, CMOS STATIC RAM, low power, 85ns, operating voltage =1.8V � 2.3V Mosel Vitelic Corp
6639 V62C18164096LL-100B 256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V � 2.3V Mosel Vitelic Corp
6640 V62C18164096LL-85B 256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V � 2.3V Mosel Vitelic Corp
6641 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6642 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6643 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6644 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6645 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6646 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6647 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6648 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6649 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6650 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6651 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6652 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6653 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6654 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6655 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6656 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
6657 W83627THF LPC Interface I/O plus KBC, Game/MIDI Port, H/W Monitor, ACPI, On Now Functions, DC Fan Ctrl Winbond Electronics
6658 X1226 Real time clock/calendar with dual alarms, programmable frequency output, on-chip oscillator compensation Xicor
6659 X1228 Real time clock/calendar with dual alarms, watchdog timer, adjustable low voltage reset, active low reset, programmable frequency output, on-chip oscillator compensation Xicor
6660 XC6201P132LB 250mA positive voltage regulator, tolerance 2%, output 1.3V Torex Semiconductor


Datasheets found :: 8266
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