DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for WOR

Datasheets found :: 7706
Page: | 219 | 220 | 221 | 222 | 223 | 224 | 225 | 226 | 227 |
No. Part Name Description Manufacturer
6661 TC554001FTI-85L 524, 288 words x 8 bit static RAM, access time 85ns TOSHIBA
6662 TC554001FTL-10 524,288 WORDS x 8BIT STATIC RAM TOSHIBA
6663 TC554001FTL-10V 524, 288 words x 8 bit static RAM, access time 100ns TOSHIBA
6664 TC554001FTL-70 524,288 WORDS x 8BIT STATIC RAM TOSHIBA
6665 TC554001FTL-70L 524,288 WORDS x 8BIT STATIC RAM TOSHIBA
6666 TC554001FTL-70V 524, 288 words x 8 bit static RAM, access time 70ns TOSHIBA
6667 TC554001FTL-85 524,288 WORDS x 8BIT STATIC RAM TOSHIBA
6668 TC554001FTL-85V 524, 288 words x 8 bit static RAM, access time 85ns TOSHIBA
6669 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6670 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6671 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6672 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6673 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6674 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6675 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
6676 TC5564AFL-15 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6677 TC5564AFL-20 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6678 TC5564APL-15 -0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM TOSHIBA
6679 TC5564APL-20 8,192 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
6680 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6681 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6682 TC5565AFL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6683 TC5565AFL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6684 TC5565APL 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6685 TC5565APL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6686 TC5565APL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6687 TC5565APL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
6688 TC55V1001F 131,072 WORD BY 8 BIT STATIC RAM TOSHIBA
6689 TC55V1001F-10 131,072 WORD BY 8 BIT STATIC RAM TOSHIBA
6690 TC55V1001F-10L 131,072 WORD BY 8 BIT STATIC RAM TOSHIBA


Datasheets found :: 7706
Page: | 219 | 220 | 221 | 222 | 223 | 224 | 225 | 226 | 227 |



© 2024 - www Datasheet Catalog com