No. |
Part Name |
Description |
Manufacturer |
6661 |
TC554001FTI-85L |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
6662 |
TC554001FTL-10 |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
6663 |
TC554001FTL-10V |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
6664 |
TC554001FTL-70 |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
6665 |
TC554001FTL-70L |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
6666 |
TC554001FTL-70V |
524, 288 words x 8 bit static RAM, access time 70ns |
TOSHIBA |
6667 |
TC554001FTL-85 |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
6668 |
TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
6669 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6670 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6671 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6672 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6673 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6674 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6675 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6676 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6677 |
TC5564AFL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6678 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
6679 |
TC5564APL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6680 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6681 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6682 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6683 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6684 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6685 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6686 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6687 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6688 |
TC55V1001F |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6689 |
TC55V1001F-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6690 |
TC55V1001F-10L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
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