| No. |
Part Name |
Description |
Manufacturer |
| 6661 |
1N5060GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 6662 |
1N5061GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 6663 |
1N5062GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 6664 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 6665 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 6666 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 6667 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 6668 |
1N5158 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 6669 |
1N5158 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 6670 |
1N5159 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 6671 |
1N5159 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 6672 |
1N5160 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 6673 |
1N5160 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 6674 |
1N5181 |
4000 V, 0.1 A standard recovery rectifier |
Solid State Devices Inc |
| 6675 |
1N5182 |
5000 V, 0.1 A standard recovery rectifier |
Solid State Devices Inc |
| 6676 |
1N5183 |
7500 V, 0.1 A standard recovery rectifier |
Solid State Devices Inc |
| 6677 |
1N5184 |
10000 V, 0.1 A standard recovery rectifier |
Solid State Devices Inc |
| 6678 |
1N5186 |
100 V, 3 W silicon rectifier diode |
BKC International Electronics |
| 6679 |
1N5186 |
100 V, 3 A fast recovery rectifier |
Solid State Devices Inc |
| 6680 |
1N5187 |
200 V, 3 A fast recovery rectifier |
Solid State Devices Inc |
| 6681 |
1N5188 |
400 V, 3 A fast recovery rectifier |
Solid State Devices Inc |
| 6682 |
1N5190 |
600 V, 3 A fast recovery rectifier |
Solid State Devices Inc |
| 6683 |
1N5194 |
70 V, 500 mW silicon diode |
BKC International Electronics |
| 6684 |
1N5195 |
180 V, 500 mW silicon diode |
BKC International Electronics |
| 6685 |
1N5196 |
225 V, 500 mW silicon diode |
BKC International Electronics |
| 6686 |
1N5221 |
Pd=500mW, Vz=2.4V zener diode |
MCC |
| 6687 |
1N5221A |
2.4 V, 20 mA, zener diode |
Leshan Radio Company |
| 6688 |
1N5221A |
2.4 V, 20 mA, zener diode |
Leshan Radio Company |
| 6689 |
1N5221B |
ZENER DIODE 2.4 VOLTS THRU 200VOLTS 500mL, 5% TOLERANCE |
Central Semiconductor |
| 6690 |
1N5221B |
500 milliwatts glass silicon zener diode, zener voltage 2.4V |
Motorola |
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