| No. |
Part Name |
Description |
Manufacturer |
| 6661 |
HM51S4800ATT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6662 |
HM51S4800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6663 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6664 |
HM51S4800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6665 |
HM51S4800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6666 |
HM51S4800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6667 |
HM51S4800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6668 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6669 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6670 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6671 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6672 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6673 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6674 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6675 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6676 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6677 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 6678 |
HM51W16165 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6679 |
HM51W16165J-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6680 |
HM51W16165J-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6681 |
HM51W16165J-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6682 |
HM51W16165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6683 |
HM51W16165LJ-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6684 |
HM51W16165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6685 |
HM51W16165LTT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6686 |
HM51W16165LTT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6687 |
HM51W16165LTT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6688 |
HM51W16165TT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6689 |
HM51W16165TT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 6690 |
HM51W16165TT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
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