| No. |
Part Name |
Description |
Manufacturer |
| 6751 |
AS8F512K32P-120_CT |
512K x 32 flash memory array |
Austin Semiconductor |
| 6752 |
AS8F512K32P-120_IT |
512K x 32 flash memory array |
Austin Semiconductor |
| 6753 |
AS8F512K32P-120_XT |
512K x 32 flash memory array |
Austin Semiconductor |
| 6754 |
AS8F512K32Q-120 |
Flash Memory Array |
Austin Semiconductor |
| 6755 |
AS8F512K32Q-120/883C |
Flash Memory Array |
Austin Semiconductor |
| 6756 |
AS8F512K32Q-120_CT |
512K x 32 flash memory array |
Austin Semiconductor |
| 6757 |
AS8F512K32Q-120_IT |
512K x 32 flash memory array |
Austin Semiconductor |
| 6758 |
AS8F512K32Q-120_XT |
512K x 32 flash memory array |
Austin Semiconductor |
| 6759 |
ASIBAM120 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 6760 |
AT-1120 |
High Power Fixed Attenuators (Radiator built-in) |
Hirose Electric |
| 6761 |
AT-120 |
Fixed Attenuators (SMA Type) |
Hirose Electric |
| 6762 |
AT-1200 |
High Power Fixed Attenuators (Heat sink Mounting Type) |
Hirose Electric |
| 6763 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6764 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6765 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6766 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6767 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6768 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6769 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6770 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6771 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6772 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6773 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6774 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6775 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 6776 |
AT28HC64B-120 |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection |
Atmel |
| 6777 |
AT49F008A-12CC |
120ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 6778 |
AT49F008A-12CI |
120ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 6779 |
AT49F008A-12TC |
120ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 6780 |
AT49F008A-12TI |
120ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
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