| No. |
Part Name |
Description |
Manufacturer |
| 6751 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 6752 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 6753 |
1812B102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 6754 |
1812B104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 6755 |
1812F102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 6756 |
1812F104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 6757 |
1812N102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 6758 |
1812N104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 6759 |
1815 |
NPN general purpose transistor |
Philips |
| 6760 |
1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 6761 |
1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 6762 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 6763 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 6764 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 6765 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 6766 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 6767 |
181NQ035 |
35V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 6768 |
181NQ040 |
40V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 6769 |
181NQ045 |
45V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 6770 |
181NQ045R |
45V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 6771 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 6772 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 6773 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 6774 |
182NQ030 |
30V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 6775 |
182NQ030R |
30V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 6776 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 6777 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 6778 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 6779 |
183-90-210-00-001 |
Dual-in-line pin / slotted / turret / solder cup headers / open frame / solder tail / wire-wrap posts |
Precid-Dip Durtal |
| 6780 |
183-90-210-00-001 |
Dual-in-line pin / slotted / turret / solder cup headers / open frame / solder tail / wire-wrap posts |
Precid-Dip Durtal |
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